IPB80N06S3L-08

IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 OptiMOS®-T Power-Transistor Features N-channel - Logic Level - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (lead free) Ultra low Rds(on) 100% Avalanche tested ESD Class 2 (HBM) EIA/JESD22-A114-B Product Summary V DS R DS(on),max (SMD version) ID 55 7.6 80 V mΩ A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80N06S3L-08 IPI80N06S3L-08 IPP80N06S3L-08 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Ordering Code SP0000-88128 SP0000-88131 SP0000-88127 Marking 3N06L08 3N06L08 3N06L08 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) www.DataSheet4U.com Symbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Value 80 61 320 170 55 ±16 Unit A Pulsed drain current2) Avalanche energy, single pulse3) Drain gate voltage2) Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V DG V GS P tot T j, T stg T C=25 °C I D=40 A mJ V V W °C T C=25 °C 105 -55 ... +175 55/175/56 Rev. 1.0 page 1 2005-09-16 IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 Parameter Symbol Conditions min. Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R thJC R thJA R thJA minimal footprint 6 cm2 cooling area5) Electrical characteristics, at T j=25 °C, un...