IPB80CN10NG

IPB80CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G OptiMOS®2 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) 175 °C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max (TO252) ID 100 78 13 V mΩ A Ideal for high-frequency switching and synchronous rectification Type IPB80CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G Package Marking PG-TO263-3 80CN10N PG-TO252-3 78CN10N PG-TO262-3 80CN10N PG-TO220-3 80CN10N PG-TO251-3 78CN10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter www.DataSheet4U.com Symbol Conditions ID T C=25 °C T C=100 °C Value 13 9 52 17 6 ±20 Unit A Continuous drain current Pulsed drain current2) Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage3) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C I D=13 A, R GS=25 Ω I D=13 A, V DS=80 V, di /dt =100 A/µs, T j,max=175 °C mJ kV/µs V W °C T C=25 °C 31 -55 ... 175 55/175/56 J-STD20 and JESD22 see figure 3 2) 3) Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V page 1 2006-06-02 Rev. 1.01 IPB80CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Therma...