TGF2022-12

Advance Product Information September19, 2005 DC - 20 GHz Discrete power pHEMT TGF2022-12 Key Features and Performance Frequency Range: DC - 20 GHz > 31 dBm Nominal Psat 58% Maximum PAE 39 dBm Nominal OIP3 13 dB Nominal Power Gain Suitable for high reliability applications 1.2mm x 0.35 m Power pHEMT Nominal Bias Vd = 8-12V, Idq = 90-150mA (Under RF Drive, Id rises from 90mA to 300mA) Chip Dimensions: 0.57 x 0.79 x 0.10 mm (0.022 x 0.031 x 0.004 in) Product Description The TriQuint TGF2022-12 is a discrete 1.2 mm pHEMT which operates from DC-20 GHz. The TGF2022-12 is designed using TriQuint’s proven standard 0.35um power pHEMT production process. The TGF2022-12 typically provides > 31 dBm of saturated output power with www.DataSheet4U.com power gain of 13 dB. The maximum power added efficiency is 58% which makes the TGF2022-12 appropriate for high efficiency applications. The TGF2022-12 is also ideally suited for Point-to-point Radio, High-reliability space, and Military applications. The TGF2022-12 has a protective surface passivation layer providing environmental robustness. Lead-free and RoHS compliant Primary Applications 35 30 Point-to-point Radio High-reliability space Military Base Stations Broadband Wireless Applications Maximum Gain (dB) 25 MSG 20 15 10 5 0 0 2 4 6 8 10 12 14 16 MAG Frequency (GHz) Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subj...