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TGF2021-01

TriQuint Semiconductor

DC-12 GHz Discrete Power pHEMT

Advance Product Information June 8, 2005 DC - 12 GHz Discrete power pHEMT • • • • • • • • TGF2021-01 Key Features and...


TriQuint Semiconductor

TGF2021-01

File Download Download TGF2021-01 Datasheet


Description
Advance Product Information June 8, 2005 DC - 12 GHz Discrete power pHEMT TGF2021-01 Key Features and Performance Frequency Range: DC - 12 GHz > 30 dBm Nominal Psat 59% Maximum PAE 11 dB Nominal Power Gain Suitable for high reliability applications 1mm x 0.35 m Power pHEMT Nominal Bias Vd = 8-12V, Idq = 75-125mA (Under RF Drive, Id rises from 75mA to 240mA) Chip Dimensions: 0.57 x 0.53 x 0.10 mm (0.022 x 0.021 x 0.004 in) Product Description The TriQuint TGF2021-01 is a discrete 1 mm pHEMT which operates from DC-12 GHz. The TGF2021-01 is designed using TriQuint’s proven standard 0.35um power pHEMT production process. The TGF2021-01 typically provides > 30 dBm of saturated output power www.DataSheet4U.com with power gain of 11 dB. The maximum power added efficiency is 59% which makes the TGF2021-01 appropriate for high efficiency applications. The TGF2021-01 is also ideally suited for Point-to-point Radio, High-reliability space, and Military applications. The TGF2021-01 has a protective surface passivation layer providing environmental robustness. Lead-free and RoHS compliant Primary Applications 35 30 Point-to-point Radio High-reliability space Military Base Stations Broadband Wireless Applications Maximum Gain (dB) 25 MSG 20 15 10 5 0 0 2 4 6 8 10 12 14 16 MAG Frequency (GHz) Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice. T...




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