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AGR21125E

TriQuint Semiconductor
Part Number AGR21125E
Manufacturer TriQuint Semiconductor
Description Transistor
Published Oct 5, 2009
Detailed Description AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21125E is a high-voltage, gol...
Datasheet PDF File AGR21125E PDF File

AGR21125E
AGR21125E

Overview
AGR21125E 125 W, 2.
110 GHz—2.
170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for wideband code division multiple access (W-CDMA), single and multicarrier class AB wireless base station power amplifier applications.
7 Table 1.
Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR21125EU AGR21125EF Sym Rı JC Rı JC Value 0.
5 0.
5 Unit °C/W °C/W Table 2.
Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Total Dissipation at TC = 25 °C: AGR21125EU AGR21125EF Derate Above 25 ˇ C: AGR21125EU AGR2...


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