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AGR21030EF

Part Number	AGR21030EF
Manufacturer	TriQuint Semiconductor
Description	Transistor
Published	Oct 5, 2009
Detailed Description	AGR21030EF 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21030EF is a high-voltage, go...
Datasheet	AGR21030EF PDF File

Overview

AGR21030EF 30 W, 2.
110 GHz—2.
170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21030EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for wideband code division multiple access (W-CDMA), single and multicarrier class AB wireless base station power amplifier applications.
Table 1.
Thermal Characteristics Parameter Thermal Resistance, Junction to Case Sym Rı JC Value 2.
0 Unit °C/W Table 2.
Absolute Maximum Ratings* Parameter Sym Value Drain-source Voltage VDSS 65 Gate-source Voltage VGS –0.
5, 15 Total Dissipation at TC = 25 °C PD 87.
5 Derate Above 25 ° C — 0.
5 CW RF Input Power — 10 (VDS = 31 V) Operating Juncti...

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AGR21030EF Transistor - TriQuint Semiconductor

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