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AGR19030EF

TriQuint Semiconductor
Part Number AGR19030EF
Manufacturer TriQuint Semiconductor
Description Transistor
Published Oct 5, 2009
Detailed Description AGR19030EF 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19030EF is a 30 W, 28 V N-channel ...
Datasheet PDF File AGR19030EF PDF File

AGR19030EF
AGR19030EF

Overview
AGR19030EF 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19030EF is a 30 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz— 1990 MHz), global system for mobile communication (GSM/EDGE), time division multiple access (TDMA), and single-carrier or multicarrier class AB power amplifier applications.
GSM Features Typical performance over entire GSM band: — P1dB: 30 W typical.
— Continuous wave (CW) power gain: @ P1dB = 15 dB.
— CW efficiency @ P1dB = 55% typical.
— Return loss: –12 dB.
Device Performance Features High-reliability, gold-metalizatio...


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