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AGR09180EF

TriQuint Semiconductor
Part Number AGR09180EF
Manufacturer TriQuint Semiconductor
Description Lateral MOSFET
Published Oct 5, 2009
Detailed Description AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-...
Datasheet PDF File AGR09180EF PDF File

AGR09180EF
AGR09180EF

Overview
AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code-division multiple access (CDMA), global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and time-division multiple access (TDMA) single and multicarrier class AB wireless base station amplifier applications.
This device is manufactured on an advanced LDMOS technology, offering state-of-the-art performance, reliability, and thermal resistance.
Packaged in an industry-standard CuW package capable of delivering a minimum output ...


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