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AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR09130E is a high-vol...
t Copy Only
AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor (LDMOS) RF power
transistor suitable for cellular band, code division multiple access (CDMA), global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and time division multiple access (TDMA) single and multicarrier class AB wireless base station amplifier applications. This device is manufactured on an advanced LDMOS technology offering stateof-the-art performance, and reliability. Packaged in an industry-standard package incorporating internal matching and capable of delivering a minimum output power of 130 W, it is ideally suited for today's RF power amplifier applications.
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Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR09130EU AGR09130EF Sym Value Unit
R
JC
0.5 0.5
°C/W
Table 2. Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Drain Current—Continuous Total Dissipation at TC = 25 °C: AGR09130EU AGR09130EF Derate Above 25 C: AGR09130EU AGR09130EF Operating Junction Temperature Storage Temperature Range Sym Value VDSS 65 VGS –0.5, 15 ID 15 PD 350 350 2.0 2.0 200 Unit Vdc Vdc Adc W
W/°C °C °C
TJ
AGR09130EU
48
AGR09130EF
5
TSTG –65, 150
Figure 1. Available Packages
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Features
Typical performance ratings are for the EDGE format: 3GPP GSM 05.05: — Output power (POUT): 50 W. — Powe...
