AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR09090EF is a high-voltage, gold-m...
AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power
transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), cellular, and multicarrier class AB power amplifier applications. This device is manufactured on an advanced LDMOS technology, offering state-of-the-art performance and reliability. Packaged in an industry-standard package and capable of delivering a minimum output power of 90 W, it is ideally suited for today's wireless base station RF power amplifier applications. Table 1. Thermal Characteristics (921 MHz—960 MHz, and 865 MHz—895 MHz) Parameter Thermal Resistance, Junction to Case: AGR09090EF Sym R JC Value 0.80 Unit °C/W
Table 2. Absolute Maximum Ratings* (921 MHz—960 MHz, and 865 MHz—895 MHz) Parameter Drain-source Voltage Gate-source Voltage Drain Current—Continuous Total Dissipation at TC = 25 °C: AGR09090EF Derate Above 25 C: AGR09090EF Operating Junction Temperature Storage Temperature Range Sym Value 65 VDSS VGS –0.5, +15 8.5 ID PD — TJ 219 1.25 200 Unit Vdc Vdc Adc W W/°C °C °C
Figure 1. AGR09090EF (Flanged) Package
GSM Features
Typical performance ratings for GSM EDGE (f = 941 MHz, POUT = 40 W): — Modulation spectrum: @ ±400 kHz = –60 dBc. @ ±600 kHz = –72 dBc. — Error vector magnitude (EVM) = 2.3%. www.DataSheet4U.com Typical performance over entire GSM band: — ...
