N-Channel MOSFET
SiR474DP
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 30 RDS(on) (Ω) 0.0095 at VGS = 10 V 0.01...
Description
SiR474DP
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 30 RDS(on) (Ω) 0.0095 at VGS = 10 V 0.012 at VGS = 4.5 V ID (A)a, g 20 20 Qg (Typ.) 8 nC
FEATURES
Halogen-free TrenchFET® Power MOSFET Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile Optimized for High-Side Synchronous Operation 100 % Rg Tested 100 % UIS Tested D
PowerPAK SO-8
Rectifier
6.15 mm
S 1 2 3 S S
5.15 mm
APPLICATIONS
G 4
D 8 7 6 5 D D D
Notebook CPU Core - High-Side Switch
G
Bottom View Ordering Information: SiR474DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 30 ± 20 20g 20g 15b, c 12b, c 50 20g 3.2b, c 20 20 29.8 19.0 3.9b, c 2.5b, c - 55 to 150 260 Unit V
Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy
A
mJ
Maximum Power Dissipation
W
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e
°C
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Symbol RthJA RthJC Typical 27 3.5 Maximum 32 4.2 Unit °C/W
Notes: a. Base on TC = 25 °C....
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