SIR464DP

New Product SiR464DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.0031 at VGS = 10 V 0.0038 at VGS = 4.5 V ID (A)a, e 50 26.5 nC 50 Qg (Typ.) FEATURES Halogen-free TrenchFET® Power MOSFET 100 % Rg and UIS Tested RoHS COMPLIANT PowerPAK SO-8 APPLICATIONS DC/DC Conversion - Low-Side Switch Notebook Server 6.15 mm S 1 2 3 S S 5.15 mm D G 4 D 8 7 6 5 D D D G Bottom View Ordering Information: SiR464DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 30 ± 20 50e 50e 29.5b, c 23.5b, c 70 50e 4.7b, c 40 80 69 44.4 5.2b, c 3.3b, c - 55 to 150 260 Unit V Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy A mJ TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)f, g W °C THERMAL RESISTANCE RATINGS Symbol Typical Maximum Unit RthJA t ≤ 10 s 19 24 Maximum Junction-to-Ambientb, d °C/W RthJC Maximum Junction-to-Case (Drain) Steady State 1.2 1.8 Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions...