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SIR438DP Dataheets PDF



Part Number SIR438DP
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description N-Channel MOSFET
Datasheet SIR438DP DatasheetSIR438DP Datasheet (PDF)

New Product SiR438DP Vishay Siliconix N-Channel 25-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 25 RDS(on) (Ω) 0.0018 at VGS = 10 V 0.0023 at VGS = 4.5 V ID (A)a, g 60 60 Qg (Typ.) 32.6 nC FEATURES • • • • Halogen-free According to IEC 61249-2-21 TrenchFET® Gen III Power MOSFET 100 % Rg Tested 100 % Avalanche Tested PowerPAK® SO-8 APPLICATIONS • Server - Low Side 6.15 mm S 1 2 3 S S 5.15 mm D G 4 D 8 7 6 5 D D D G Bottom View Ordering Information: SiR438DP-T1-GE3 (Lead (Pb)-free and Halogen.

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New Product SiR438DP Vishay Siliconix N-Channel 25-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 25 RDS(on) (Ω) 0.0018 at VGS = 10 V 0.0023 at VGS = 4.5 V ID (A)a, g 60 60 Qg (Typ.) 32.6 nC FEATURES • • • • Halogen-free According to IEC 61249-2-21 TrenchFET® Gen III Power MOSFET 100 % Rg Tested 100 % Avalanche Tested PowerPAK® SO-8 APPLICATIONS • Server - Low Side 6.15 mm S 1 2 3 S S 5.15 mm D G 4 D 8 7 6 5 D D D G Bottom View Ordering Information: SiR438DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID Limit 25 ± 20 60a, g 60 40b, c 32b, c 80 60a, g 4.9b, c 50 125 83 53 5.4b, c 3.4b, c - 55 to 150 260 Unit V Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy IDM IS IAS EAS PD A mJ Maximum Power Dissipation W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Symbol RthJA RthJC Typical 18 1.0 Maximum 23 1.5 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not www.DataSheet4U.com required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 65 °C/W. g. Package Limited. Document Number: 69029 S-83093-Rev. A, 29-Dec-08 www.vishay.com 1 New Product SiR438DP Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamic b Symbol VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf IS ISM VSD trr Qrr ta tb Test Conditions VGS = 0 V, ID = 250 µA ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 25 V, VGS = 0 V VDS = 25 V, VGS = 0 V, TJ = 55 °C VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 4.5 V, ID = 20 A VDS = 10 V, ID = 20 A Min. 25 Typ. Max. Unit V 24 - 6.0 1.0 2.3 ± 100 1 10 30 0.00145 0.0019 90 0.0018 0.0023 mV/°C V nA µA A Ω S Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time a 4560 VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 10 V, ID = 20 A VDS = 10 V, VGS = 4.5 V, ID = 20 A f = 1 MHz VDD = 10 V, RL = 1 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 0.2 1140 445 70 32.6 9.7 9.1 1.0 15 9 41 8 37 VDD = 10 V, RL = 1 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 21 40 20 TC = 25 °C IS = 4 A 0.72 34 IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 26 16 18 2 30 18 80 16 70 40 80 40 60 80 1.1 65 50 ns Ω 105 49 nC pF A V ns nC ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. www.DataSheet4U.com Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 69029 S-83093-Rev. A, 29-Dec-08 New Product SiR438DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 80 VGS = 10 thru 4 V 64 I D - Drain Current (A) VGS = 3 V I D - Drain Current (A) 8 10 48 6 32 4 TC = 25 °C 2 TC = 125 °C TC = - 55 °C 16 0 0.0 0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.0025 6000 Transfer Characteristics R DS(on) - On-Resistance (Ω) 0.0022 C - Capacitan.


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