PD 91736A
IRG4RC10KD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Short Circuit Rate...
PD 91736A
IRG4RC10KD
INSULATED GATE BIPOLAR
TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-252AA package
C
Short Circuit Rated UltraFast IGBT
VCES = 600V
G E
VCE(on) typ. = 2.39V
@VGE = 15V, IC = 5.0A
n-ch an nel
Benefits
Latest generation 4 IGBT's offer highest power density motor controls possible HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses For hints see design tip 97003
D-PAK TO-252AA
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM tsc VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector CurrentQ Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
Max.
600 9.0 5.0 18 18 4.0 16 10 ± 20 38 15 -55 to +150 300 (0.0...