Si8435DB

Si8435DB Vishay Siliconix P-Channel 1.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.041 at VGS = - 4.5 V - 20 0.048 at VGS = - 2.5 V 0.058 at VGS = - 1.8 V 0.075 at VGS = - 1.5 V ID (A)a - 10.0 - 9.32 22 nC - 8.48 - 7.45 Qg (Typ.) FEATURES TrenchFET® Power MOSFET Ultra Small MICRO FOOT® Chipscale Packaging Reduces Footprint Area, Profile COMPLIANT (0.62 mm) and On-Resistance Per Footprint Area RoHS APPLICATIONS Low Threshold Load Switch for Portable Devices - Low Power Consumption - Increased Battery Life MICRO FOOT Bump Side V iew 3 D D 2 Backside V iew G S 8435 XXX Device Marking: 8435 xxx = Date/Lot Traceability Code D P-Channel MOSFET S 4 G 1 Ordering Information: Si8435DB-T1-E1 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS Limit - 20 ±5 - 10.0 - 8.06 - 6.72b,c - 5.37b,c - 15 - 5.21 - 2.31b,c 6.25 4.0 2.78b,c 1.78b,c - 55 to 150 260 Unit V Continuous Drain Current (TJ = 150 °C) ID A Pulsed Drain Current Continuous Source-Drain Diode Current IDM IS Maximum Power Dissipation PD W TJ, Tstg IR/Convection Package Reflow Conditionsd Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1” x 1” FR4 board. c. t = 10 s. d. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering. www.DataSheet4U.com e. In this document, any reference to th...