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KTX212E Dataheets PDF



Part Number KTX212E
Manufacturers KEC
Logo KEC
Description EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet KTX212E DatasheetKTX212E Datasheet (PDF)

SEMICONDUCTOR TECHNICAL DATA KTX212E EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES Including two devices in TES6. (Thin Extreme Super mini type with 6 leads.) With Built-in bias resistors. Simplify circuit design. Reduce a quantity of parts and manufacturing process. EQUIVALENT CIRCUIT Q1 C Q2 OUT B R1 IN Q2 R1=2.2KΩ R2=2.2KΩ R2 E COMMON EQUIVALENT CIRCUIT (TOP VIEW) 65 4 Q1 Q2 12 3 Q1 MAXIMUM RATING (Ta=25 ) CHARA.

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SEMICONDUCTOR TECHNICAL DATA KTX212E EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES Including two devices in TES6. (Thin Extreme Super mini type with 6 leads.) With Built-in bias resistors. Simplify circuit design. Reduce a quantity of parts and manufacturing process. EQUIVALENT CIRCUIT Q1 C Q2 OUT B R1 IN Q2 R1=2.2KΩ R2=2.2KΩ R2 E COMMON EQUIVALENT CIRCUIT (TOP VIEW) 65 4 Q1 Q2 12 3 Q1 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current * Single pulse Pw=1mS. Q2 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Output Voltage Input Voltage Output Current Q1, Q2 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Power Dissipation Junction Temperature Storage Temperature Range * Total Raing. SYMBOL VCBO VCEO VEBO IC ICP * SYMBOL VO VI IO SYMBOL PD * Tj Tstg A A1 CC B B1 1 6 DIM MILLIMETERS A 1.6+_ 0.05 A1 1.0+_ 0.05 2 5 B 1.6 +_0.05 B1 1.2+_ 0.05 3 4 C 0.50 D 0.2+_ 0.05 H 0.5+_ 0.05 J 0.12+_ 0.05 P P P5 JD H 1. Q1 (EMITTER) 2. Q1 (BASE) 3. Q2 OUT (COLLECTOR) 4. Q2 COMMON (EMITTER) 5. Q2 IN (BASE) 6. Q1 (COLLECTOR) TES6 Marking 654 BGType Name Lot No. 1 RATING 15 12 6 500 1 2 3 UNIT V V V RATING 50 12, -10 100 RATING 200 150 -55 150 UNIT V V UNIT 2008. 9. 23 Revision No : 1 1/4 KTX212E Q1 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance SYMBOL ICBO V(BR)CBO V(BR)CEO V(BR)EBO hFE VCE(sat) fT Cob TEST CONDITION VCB=15V, IE=0 IE=10 A IC=1mA IE=10 A VCE=2V, IC=10mA IC=200mA, IB=10mA VCE=2V, IC=10mA, fT=100MHz VCB=10V, IE=0, f=1MHz MIN. 15 12 6 270 - TYP. 90 320 7.5 MAX. 100 680 250 - UNIT nA V V V mV MHz pF Q2 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Output Cut-off Current IO(OFF) DC Current Gain GI Output Voltage VO(ON) Input Voltage (ON) VI(ON) Input Voltage (OFF) VI(OFF) Transition Frequency fT * Input Current II Note : * Characteristic of Transistor Only. VO=50V, VI=0 VO=5V, IO=20 IO=10 , II=0.5 VO=0.3V, IO=20 VO=5V, IO=0.1 VO=10V, IO=5 VI=5V MIN. 20 0.5 - TYP. 0.1 1.83 1.15 250 - MAX. 500 0.3 3 3.8 UNIT. V V V 2008. 9. 23 Revision No : 1 2/4 DC CURRENT GAIN h FE KTX212E Q 1 (NPN TRANSISTOR) hFE - I C 1K Ta=125 C 500 Ta=25 C 300 Ta=-40 C 100 50 30 VCE =2V 10 13 10 30 100 300 COLLECTOR CURRENT IC (mA) 1K COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) 1K 500 IC /IB =20 300 VCE(sat) - I C 100 50 30 10 Ta=T1a2=52T5aC=C-40 C 5 3 1 1 3 10 30 100 300 1K COLLECTOR CURRENT IC (mA) 1K Ta=25 C 500 300 VCE(sat) - I C 100 50 30 I C/IB =50 10 I C/IB =20 5 I C/IB =10 3 1 1 3 10 30 100 300 1K COLLECTOR CURRENT IC (mA) BASE-EMITTER SATURATION VOLTAGE VBE(sat) (mV) 10K IC /IB =20 5K 3K VBE(sat) - I C 1K Ta=-40 C 500 300 Ta=T2a5=1C25 C 100 1 3 10 30 100 300 COLLECTOR CURRENT IC (mA) 1K COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) COLLECTOR CURRENT IC (mA) Ta=125 C Ta=25 C Ta=-40 C 1K VCE =2V 500 300 I C - VBE 100 50 30 10 5 3 1 0 0.5 1.0 1.5 BASE-EMITTER VOLTAGE VBE (V) 2008. 9. 23 Revision No : 1 TRANSITION FREQUENCY fT (MHz) 1K VCE =2V 500 Ta=25 C 300 fT - IC 100 50 30 10 1 3 10 30 100 300 1K COLLECTOR CURRENT IC (mA) 3/4 KTX212E COLLECTOR INPUT CAPACITANCE C ib (PF) COLLECTOR OUTPUT CAPACITANCE Cob (PF) Q 1 (NPN TRANSISTOR) Cob - VCB , Cib - VEB 1K IE =0A 500 f=1MHz Ta=25 C 300 100 50 30 Cib 10 C ob 5 3 1 0.1 0.3 1 3 10 30 100 COLLECTOR-BASE VOLTAGE VCB (V) EMITTER-BASE VOLTAGE VEB (V) Q2 100 50 30 I O - V I(ON) 10 5 3 1 0.5 0.3 0.1 0.1 Ta=100 C Ta=25 C Ta=-25 C 0.3 1 VO =0.2V 3 10 INPUT ON VOLTAGE VI(ON) (V) OUTPUT CURRENT IO (mA) DC CURRENT GAIN G I Q2 300 GI - IO 100 50 30 10 5 3 1 Ta=100 C Ta=25 C Ta=-25 C VO =5V 3 10 30 100 OUTPUT CURRENT IO (mA) 2008. 9. 23 Revision No : 1 OUTPUT CURRENT I O (µA) Ta=100 C Ta=25 C Ta=-25 C COLLECTOR LPOWER DISSIPATION PC (mW) 250 200 150 100 50 0 0 Pc - Ta 25 50 75 100 125 AMBIENT TEMPERATURE Ta ( C) 150 Q2 3k 1k 500 300 I O - V I(OFF) 100 50 30 0 VO =5V 0.5 1.0 1.5 2.0 2.5 3.0 INPUT OFF VOLTAGE VI(OFF) (V) 4/4 .


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