IRFB4615PBF

PD -96171 IRFB4615PbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free TO-220AB IRFB4615PbF D G S VDSS RDS(on) typ. max. ID 150V 32m: 39m: 35A G D S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. 35 25 140 144 0.96 ± 20 38 -55 to + 175 300 10lb in (1.1N m) 109 See Fig. 14, 15, 22a, 22b, mJ A mJ Units A W W/°C V V/ns ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current www.DataSheet4U.com PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage Peak Diode Recovery dv/dt TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw c e °C x x Avalanche Characteristics EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy c d f Thermal Resistance Symbol RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient (PCB Mount) j Parameter Typ. Max. 1.045 Units °C/W ij ––– 0.50 ––– 62 www.irf.com 1 09/05/08 IRFB4615PbF Static @ TJ = 25°C (unless oth...