AA16-9DIL18

www.DataSheet4U.com AA16-9 DIL18 16 Element Avalanche Photodiode Array Special characteristics: quantum efficiency >80% at λ 760-910 nm high speed, low noise good uniformity between elements low cross talk Parameters: no. of Elements Active Area / Element [µm] Gap / Separation [µm] Pitch [µm] Spectral Range Spectral Responsivity 1) (at 905 nm, M = 100) Max. Gain (Ipo= 1nA) Dark Current 1) (M = 100) Capacitance 1)/Element (M=100) Breakdown Voltage UBR (at ID = 2 µA) Rise Time at 905 nm, 50 Ω Cross-talk (at 905 nm) Photo Current Uniformity (at M= 50) Dark Current Uniformity (at M= 50) Operating Temperature Storage Temperature AA16-9 DIL18 16 648 * 208 Package DIL18: 18 17 16 15 14 13 12 11 10 112 320 450 … 1050 min. 55 A/W typ. 60 A/W typ. 100 typ. 5 nA 0.7 1 2 3 4 5 22.8 1.5 6 7 8 9 7.62 window 2.2 2.54 typ. 2 pF 100 … 300 V typ. 2 ns typ. 50 dB ± 20 % typ. ± 5 % ± 20 % typ. ± 5 % -20 ... +70 °C -60 ... +100 °C 7.5 Pin no. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 1) measurement conditions: Setup of photo current 1.0 nA at M = 1 and irradiation by a IRED (880 nm, 80 nm bandwith). Increase the photo current up to 100 nA, (M = 100) by internal multiplication due to an increasing bias voltage. Function Element 1 Element 3 Element 5 Element 7 Element 9 Element 11 Element 13 Element 15 Guard Ring Element 16 Element 14 Element 12 Element 10 Common Anode Element 8 Element 6 Element 4 Element 2 www.silicon-sensor.com Version: 06-03-03 Specification before: AD-LA-16-9-DI...