SIF912EDZ

SiF912EDZ www.DataSheet4U.com Vishay Siliconix Bi-Directional N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.019 @ VGS = 4.5 V 30 0.0195 @ VGS = 4.0 V 0.022 @ VGS = 3.1 V 0.027 @ VGS = 2.5 V FEATURES ID (A) 10.7 10.5 9.9 9.0 D TrenchFETr Power MOSFET: 2.5-V Rated D ESD Protected: 3000 V APPLICATIONS D Battery Protection Circuitry D 1-Cell Li-Ion Battery Pack − LiB/LiP − Lithium-Polymer D1 D2 PowerPAKr 2 x 5 1 2 S1 S1 3 6 S2 5 S2 4 G2 2.6 kW G1 G1 G2 2.6 kW Marking Code MCXYZ MC: Part # Code XYZ: Lot Traceability and Date Code S1 S2 Ordering Information: SiF912EDZ-T1—E3 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (VGS = 8 V) Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs 30 Steady State Unit V "12 10.7 7.7 80 2.9 3.5 1.8 −55 to 150 1.3 1.6 0.86 7.4 5.3 A W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72952 S-50131—Rev. B, 24-Jan-05 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 30 61 4.5 Maximum 36 76 5.6 Unit _C/W 1 SiF912EDZ www.DataSheet4U.com Vishay Siliconix SPECIFICATIONS (TJ ...