2SC3871

Power Transistors 2SC3871 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 0.7±0.1 10.0±0.2 4.2±0.2 s Features 5.5±0.2 2.7±0.2 4.2±0.2 16.7±0.3 7.5±0.2 q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO) q Full-pack package which can be installed to the heat sink with / one screw φ3.1±0.1 1.3±0.2 1.4±0.1 e s Absolute Maximum Ratings (TC=25˚C) c type) Parameter Symbol Ratings Unit 14.0±0.5 Solder Dip 4.0 n d tage. ued Collector to base voltage VCBO 500 V a e cle s contin Collector to emitter voltage VCES 500 V cy is VCEO 400 V n u t life ed, d Emitter to base voltage VEBO 7 V duc typ Peak collector current ICP 20 A te tin ur Pro tinued Collector current IC fo on Base current IB wing disc Collector power TC=25°C in n follo ned dissipation Ta=25°C PC 10 A 5 A 45 W 2 des , pla Junction temperature Tj 150 ˚C a o inclu type Storage temperature Tstg –55 to +150 ˚C M isc s ntinuedtenance Electrical Characteristics (TC=25˚C) /Disco main Parameter Symbol Conditions D ance type, Collector cutoff current ten ce Emitter cutoff current Main tenan Collector to emitter voltage main Forward current transfer ratio (planed Collector to emitter saturation voltage ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VCB = 500V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 5A IC = 5A, IB = 1A 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 ...