DatasheetsPDF.com

2SC3871

Part Number	2SC3871
Manufacturer	Inchange Semiconductor
Description	Power Transistor
Published	Sep 22, 2009
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= 500V(Min.) ·Low Collector Sa...
Datasheet	2SC3871 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= 500V(Min.
) ·Low Collector Saturation Voltage ·Wide Area of Safe Operation ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCES Collector-Emitter Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC...

Similar Datasheet

2SC380 NPN Transistor - HAOCHANG
2SC380 NPN Transistor - SEMTECH
2SC3802K Epitaxial Planar NPN Silicon Transistor - Rohm
2SC3803 Silicon NPN Transistor - Toshiba Semiconductor
2SC3803 Transistor - Kexin
2SC3805 Silicon NPN Transistor - Toshiba Semiconductor
2SC3807 NPN Epitaxial Planar Silicon Transistor - Sanyo Semicon Device
2SC3807 TRANSISTOR - WEJ
2SC3807 Silicon NPN transistor - BLUE ROCKET ELECTRONICS
2SC3807 NPN Transistor - JCET

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)