2SC3563

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications. ·High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ 40 W 2 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3563 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A ICBO Collector Cutoff Current VCB= 500V; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE-1 DC Current Gain IC= 0.5A; VCE= 5V hFE-2 DC Current Gain IC= 4A; VCE= 5V 2SC3563 MIN TYP. MAX UNIT 450 V 600 V 1.0 V 1.5 V 100 μA 1 mA 20 8 Notice： ISC reserves the rights to make changes of the content her...