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2SC3356W

Galaxy Semi-Conductor Holdings Limited
Part Number 2SC3356W
Manufacturer Galaxy Semi-Conductor Holdings Limited
Description Silicon NPN Transistor
Published Sep 22, 2009
Detailed Description com BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z Low noise and high gain: NF=1.1...
Datasheet PDF File 2SC3356W PDF File

2SC3356W
2SC3356W

Overview
com BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z Low noise and high gain: NF=1.
1dB TYP, Ga=11dB TYP.
@VCE=10V,IC=7mA,f=1.
0GHz Production specification 2SC3356W Pb Lead-free z High power gain:MAG=13dB TYP.
@VCE=10V.
IC=20mA,f=1.
0GHz APPLICATIONS z NPN Silicon Epitaxial Planar Transistor.
SOT-323 ORDERING INFORMATION Type No.
2SC3356W Marking R23/R24/R25 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature Value 20 12 3 100 200 -55...


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