2SC2510A

2SC2510A www.DataSheet4U.com TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28V SUPPLY VOLTAGE USE) Unit in mm z z z z z Specified 28V, 28MHz Characteristics Output Power Power Gain Collector Efficiency : Po = 150WPEP (Min.) : Gp = 12.2dB (Min.) : ηC = 35% (Min.) Intermodulation Distortion : IMD = −30dB (Max.) ABSOLUTE MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCES VCEO VEBO IC PC Tj Tstg RATING 60 60 35 4 20 250 175 −65~175 UNIT V V V V A W °C °C JEDEC EIAJ TOSHIBA Weight: 5.2g — — 2−13B1A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). MARKING TOSHIBA JAPAN 2SC2510 Dot Lot No. 1 2007-11-01 2SC2510A www.DataSheet4U.com ELECTRICAL CHARACTERISTICS (Tc = 25°C) CH...