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2SC2248 Dataheets PDF



Part Number 2SC2248
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Power Transistor
Datasheet 2SC2248 Datasheet2SC2248 Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power switching ·Power amplification ·Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 .

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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power switching ·Power amplification ·Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 16 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 3 A 40 W 175 ℃ Tstg Storage Temperature Range -65~175 ℃ 2SC2248 isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2248 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustainig Voltage IC= 50mA; L= 25mH 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A 1.2 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A 1.5 V hFE DC Current Gain ICBO Collector Cutoff Current ICEO Collector Cutoff Current IC= 3A; VCE= 5V VCB= 450V; IE= 0 TC=125℃ VCE= 400V; IB= 0 10 1.0 4.0 mA 5.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA Switching Times tr Rise Time tstg Storage Time IC=3A; IB1=- IB2= 0.6A 1.0 μs 2.0 μs tf Fall Time 1.0 μs NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.cn 2 isc & iscsemi is registered trademark .


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