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2SD873 Dataheets PDF



Part Number 2SD873
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Power Transistor
Datasheet 2SD873 Datasheet2SD873 Datasheet (PDF)

isc Silicon NPN Power Transistor 2SD873 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V (Min) ·High Power Dissipation ·High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power amplifier applications. ·High power switching applications. ·DC-DC converter applications. ·Regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 160 V VCEO C.

  2SD873   2SD873



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isc Silicon NPN Power Transistor 2SD873 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V (Min) ·High Power Dissipation ·High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power amplifier applications. ·High power switching applications. ·DC-DC converter applications. ·Regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 16 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 4 A 150 W 175 ℃ Tstg Storage Temperature Range -65~175 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD873 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Voltage Breakdown IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 0.8A MIN TYP. MAX UNIT 140 V 0.4 1.4 V VBE(on) Base-Emitter On Voltage IC= 8A; VCE= 4V 1.2 2.2 V ICBO Collector Cutoff Current VCB= 140V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 0.1 mA hFE-1 DC Current Gain IC= 8A; VCE= 4V 15 60 hFE-2 DC Current Gain IC= 16A; VCE= 4V 5 COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz 350 pF fT Current-Gain—Bandwidth Product IC= 1A; VCE= 4V 1.5 MHz Switching Times ton Turn-on Time 2.5 μs tstg Storage Time VCC= 50V, RL= 10Ω,IB1= IB2= 0.5A 4.5 tf Fall Time 1.4 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark .


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