2SD5703

isc Silicon NPN Power Transistors INCHANGE Semiconductor 2SD5703 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 800 V 6 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature 30 A 70 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD5703 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 1.6A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 1.6A 1.5 V ICBO Collector Cutoff Current VCB= 1400V; IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE -1 DC Current Gain IC= 1A; VCE= 5V 15 40 hFE -2 DC Current Gain tf Fall Time IC= 8A; VCE= 5V 5.3 IC= 6A, IB1= 1.2A; IB2= -2.4A; RL= 33.3Ω;VCC= 200V 7.3 0.3 μs NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The info...