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2SD5011

Part Number	2SD5011
Manufacturer	Inchange Semiconductor
Description	Power Transistor
Published	Sep 22, 2009
Detailed Description	isc Silicon NPN Power Transistors INCHANGE Semiconductor 2SD5011 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (M...
Datasheet	2SD5011 PDF File

Overview

isc Silicon NPN Power Transistors INCHANGE Semiconductor 2SD5011 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of colour TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 800 V 6 V IC Collector Current-Continuous 3.
5 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temper...

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