LFB01L

Ordering number:EN1885C LFB01, 01L Silicon Planar Leadless Type Ultrahigh-Speed Switching Diode Features · Highly reliable leadless glass sleeve structure. · Very small size. · Capable of being suface-mounted. · Forward voltage : VF max=1.2V. · Interterminal capacitance : C max=3pF. · Reverse recovery time : trr max=4ns. Package Dimensions unit:mm 1137 [LFB01, 01L] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Peak Reverse Voltage Reverse Voltage Peak Forward Current Average Rectified Current Surge Curent Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VRM VR IFM IO IFSM P Tj Tstg Conditions Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time VF IR1 IR2 C trr Reverse Recovery Time (trr) Test Circuit IF=100mA VR=30V At each VR VR=0V, f=1MHz VR=6V, IF=10mA, RL=50Ω C:Cathode A:Anode LFB01L LFB01 55 90 50 80 → 480 → 150 →2 → 300 → +175 → –65 to+ 175 Unit V V mA mA A mW ˚C ˚C Ratings min typ max Unit 1.2 V 0.1 µA 0.5 µA 3 pF 4 ns Unit (resistance :Ω, capacitance :F) SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 71598HA (KT)/2239MO/D288MO/D025KI, TS No.1885-1/2 LFB01, 01L No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power con...