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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
2SD...
www.DataSheet4U.com
INCHANGE Semiconductor
isc Product Specification
isc Silicon
NPN Darlington Power
Transistor
2SD2237
DESCRIPTION ·High DC Current Gain: hFE = 2000(Min)@ IC= 2A ·Low Collector Saturation Voltage: VCE(sat) = 2.0V(Max.) @IC= 5A ·Complement to Type 2SB1478
APPLICATIONS ·Designed for power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
w
ww
s c s .i
VALUE 100 V 100 V 5 V 8 A 60 W
UNIT
n c . i m e
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature
PC
Tj
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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www.DataSheet4U.com
INCHANGE Semiconductor
isc Product Specification
isc Silicon
NPN Darlington Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
2SD2237
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 10mA, IB= 0
100
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC= 50μA; IE=0
100
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 2mA; IC=0
5
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 5A, IB= 20mA
B
2.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 5A, IB= 20mA
B
ICBO
Collector Cutoff current
IEBO
Emitter Cutoff current
hFE
DC Current Gain
w w
w.
m e s isc
VCB= 100V, IE= 0 VEB= 5V, IC= 0 IC= 2A; VCE= 3V
n c . i
2000
2.5
V
10
μA
2
m...