DatasheetsPDF.com

2SD2027

Part Number	2SD2027
Manufacturer	Inchange Semiconductor
Description	Power Transistor
Published	Sep 22, 2009
Detailed Description	isc Silicon NPN Power Transistor 2SD2027 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Good ...
Datasheet	2SD2027 PDF File

Overview

isc Silicon NPN Power Transistor 2SD2027 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB1346 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency and general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction T...

Similar Datasheet

2SD200 NPN Transistor - INCHANGE
2SD200 SILICON POWER TRANSISTOR - SavantIC
2SD2000 Silicon NPN Transistor - Panasonic Semiconductor
2SD2000 SILICON POWER TRANSISTOR - SavantIC
2SD2000 NPN Transistor - INCHANGE
2SD2001 NPN Transistor - INCHANGE
2SD2005 NPN Transistor - ROHM
2SD2006 NPN Transistor - Rohm
2SD2008 1.2W PACKAGE POWER TRANSISTOR - Rohm
2SD2009 NPN Transistor - ROHM

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)