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2SD1756

Inchange Semiconductor

Power Transistor


Description
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 170V(Min) ·High DC Current Gain : hFE= 1500(Min) @IC= 5A ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage high current amplifier applications...



Inchange Semiconductor

2SD1756

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