isc Silicon NPN Power Transistor
DESCRIPTION ·High Voltage ·High Switching Speed ·Built-in damper diode ·Wide Area of S...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Voltage ·High Switching Speed ·Built-in damper diode ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
1500
V
VCES
Collector-Emitter Voltage
1500
V
VCEO
Collector-Emitter Voltage
700
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
5
A
ICP
Collector Current-Peak
15
A
IB
Base Current- Continuous
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
2
A
100
W
150
℃
Tstg
Storage Temperature Range
-55-150 ℃
2SD1730
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isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-Base Breakdown Voltage
IE=200mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB= 1A
hFE
DC Current Gain
IC= 1A; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 750V; IE= 0 VCB= 1500V; IE= 0
VECF
C-E Diode Forward Voltage
IF= 5A
fT
Transition Frequency
IC= 1A; VCE= 10V
Switching Times, Resistive Load
ts
Storage Time
tf
Fall Time
IC= 4A; IB1= 0.8A; IB2= 1.6A, VCC= 200V
2SD1730
MIN TYP MAX UNIT
7
V
8.0
V
1.5
V
5
25
10 μA
1.0 ...