2SD1663

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 1300V (Min.) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1300 V VCES Collector- Emitter Voltage 1300 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7.7 V IC Collector Current-Continuous 5 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1663 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.5A; L= 50mH VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2A VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 2A IEBO Emitter Cutoff Current ICBO Collector Cutoff Current hFE DC Current Gain VEB= 7.7V; IC= 0 VCB= 750V; IE= 0 VCB= 1300V; IE= 0 IC= 1A; VCE= 5V Switching times ton Turn-On Time tstg Storage Time IC= 2.5A, IB1= 0.5A, IB2= -1A tf Fall Time 2SD1663 MIN TYP. MAX UNIT 700 V 2.0 V 1.5 V 100 μA 50 μA 1.0 mA 18 50 1.0 μs 3.0 μs 0.5 μs NOTICE： ISC r...