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2SD1605 Dataheets PDF



Part Number 2SD1605
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Power Transistor
Datasheet 2SD1605 Datasheet2SD1605 Datasheet (PDF)

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 1.5A ·Complement to Type 2SB1105 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO.

  2SD1605   2SD1605


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