isc Silicon NPN Darlington Power Transistor
2SD1602
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(...
isc Silicon
NPN Darlington Power
Transistor
2SD1602
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·High DC Current Gain
: hFE= 1000(Min) @IC= 2A ·Complement to Type 2SB1102 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifiers applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
4
A
ICP
Collector Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
8
A
40
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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isc Silicon
NPN Darlington Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 5mA; IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 4mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA
VBE(sat)-1 Base-Emitter Saturation Voltage VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 2A; IB= 4mA IC= 4A; IB= 40mA
ICBO
Collector Cutoff Current
VCB= 60V; IE= 0
ICEO
Collector Cutoff Current
VCE= 50V; RBE= ∞
hFE
DC Current Gain
IC= 2A; VCE= 3V
VECF
C-E Diode Forward Voltage
IF= 4A
Swit...