2SD1500

isc Silicon NPN Darlington Power Transistor 2SD1500 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 10A ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD1500 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 100 V VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 25mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 10A; IB= 25mA 2.0 V ICBO Collector Cutoff Current VCB= 150V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 8V; IC= 0 16 mA hFE DC Current Gain IC= 10A; VCE= 2V 1000 VECF C-E Diode Forward Voltage IF= 10A 3.0 V COB Output Capacitance IE= 0; VCB= 50V, ftest= 1MHz 75 pF fT Current-Gain—Bandwidth Product IC= 1A; VCE= 5V ...