isc Silicon NPN Power Transistor
2SD1494
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Spee...
isc Silicon
NPN Power
Transistor
2SD1494
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for TV horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @ TC= 25℃
TJ
Junction Temperature
6
A
50
W
150
℃
Tstg
Storage Temperature Range
-45~150
℃
isc website:www.iscsemi.com
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isc Silicon
NPN Power
Transistor
2SD1494
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞
800
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
6
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2.5A; IB= 0.8A
ICBO
Collector Cutoff Current
VCB= 600V; IE= 0
5.0
V
1.5
V
10 μA
tf
Fall Time
IC= 2.75A, IB1= 0.6A, IB2= 1.3A
1.0 μs
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. IS...