isc Silicon NPN Power Transistor
DESCRIPTION ·High Switching Time ·Low Collector Saturation Voltage
: VCE(sat)= 0.4V(Ma...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Switching Time ·Low Collector Saturation Voltage
: VCE(sat)= 0.4V(Max)@IC= 4A ·Wide Area of Safe Operation ·Complement to Type 2SB983 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Inverters, converters ·Controllers for DC motor, pulse motor ·Switching power supplies ·General power applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
60
V
VCEO Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
12
A
IB
Base Current-Continuous
1.5
A
IBM
Base Current-Peak
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
4
A
40
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX 3.1
UNIT ℃/W
2SD1345
isc website:www.iscsemi.com
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isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A
VBE(sat) ICBO
Base-Emitter Saturation Voltage Collector Cutoff Current
IC= 4A; IB= 0.4A VCB= 40V; IE= 0
ICEO
Collector Cutoff Current
VCE= 40V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE-1
DC Current...