INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1170
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 120V(Min.) ·Low Collector Saturation Voltage ·High DC Current Gain ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Driver for solenoid,motor and ...