DatasheetsPDF.com

2SD1832

Part Number	2SD1832
Manufacturer	Inchange Semiconductor Company
Description	Silicon NPN Darlington Power Transistor
Published	Sep 22, 2009
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current:: IC= 5A ·Low Collector Saturation Voltage : VCE(s...
Datasheet	2SD1832 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current:: IC= 5A ·Low Collector Saturation Voltage : VCE(sat)= 1.
0V(Max.
)@IC= 3A ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ...

Similar Datasheet

2SD180 Silicon NPN Power Transistor - Inchange Semiconductor
2SD1800 NPN Epitaxial Silicon Transistor - Sanyo Semicon Device
2SD1801 Bipolar Transistor - ON Semiconductor
2SD1801 Silicon NPN Power Transistor - Inchange Semiconductor
2SD1801 PNP/NPN Epitaxial Planar Silicon Transistors - Sanyo Semicon Device
2SD1802 Silicon NPN Power Transistor - Inchange Semiconductor
2SD1802 NPN Transistor - TRANSYS
2SD1802 NPN Epitaxial Planar Silicon Transistors - GME
2SD1802 Bipolar Transistor - ON Semiconductor
2SD1802 PNP/NPN Epitaxial Planar Silicon Transistors - Sanyo Semicon Device

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)