DirectFET TM Power MOSFET
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IRF6713SPbF IRF6713STRPbF
Typical values (unless otherwise specified)
PD - 96129A
DirectFET Powe...
Description
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IRF6713SPbF IRF6713STRPbF
Typical values (unless otherwise specified)
PD - 96129A
DirectFET Power MOSFET RDS(on) Qgs2
2.7nC
l l l l l l l l l l
RoHS Compliant Containing No Lead and Bromide Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for both Sync.FET and some Control FET application Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques 100% Rg tested
VDSS Qg
tot
VGS Qgd
6.3nC
RDS(on) Qoss
14nC
25V max ±20V max 2.2mΩ@ 10V 3.5mΩ@ 4.5V
Qrr
18nC
Vgs(th)
1.9V
21nC
SQ
MT MP
DirectFET ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX
Description
The IRF6713SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6713SPbF balances both low resistance a...
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