DatasheetsPDF.com

PD84006-E

ST Microelectronics
Part Number PD84006-E
Manufacturer ST Microelectronics
Description RF Power Transistor
Published Sep 21, 2009
Detailed Description com PD84006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Fea...
Datasheet PDF File PD84006-E PDF File

PD84006-E
PD84006-E

Overview
com PD84006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features ■ ■ ■ ■ ■ ■ Excellent thermal stability Common source configuration Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz Plastic package ESD protection In compliance with the 2002/95/EC european directive PowerSO-10RF (formed lead) Description The PD84006-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor.
It is designed for high gain, broadband commercial and industrial applications.
It operates at 7 V in common source mode at frequencies of up to 1 GHz boasts the excellent gain, linearity and reliability of ST’s lates...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)