PBLS6023D

www.DataSheet4U.com PBLS6023D 60 V, 1.5 A PNP BISS loadswitch Rev. 01 — 13 August 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. 1.2 Features I I I I I Low VCEsat (BISS) and resistor-equipped transistor in one package Low threshold voltage (<1 V) compared to MOSFET Space-saving solution Reduction of component count AEC-Q101 qualified 1.3 Applications I I I I Supply line switches Battery charger switches High-side switches for LEDs, drivers and backlights Portable equipment 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat Quick reference data Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance collector-emitter voltage output current bias resistor 1 (input) bias resistor ratio single pulse; tp ≤ 1 ms IC = −1.5 A; IB = −100 mA open base [1] Conditions open base Min - Typ 110 Max −60 −1.5 −3 175 Unit V A A mΩ TR1; PNP low VCEsat transistor TR2; NPN resistor-equipped transistor VCEO IO R1 R2/R1 [1] 7 0.8 10 1 50 100 13 1.2 V mA kΩ Pulse test: tp ≤ 300 µs; δ ≤ 0.02. www.DataSheet4U.com NXP Semiconductors PBLS6023D 60 V, 1.5 A PNP BISS loadswitch 2. Pinning information Table 2. Pin 1 2 3 4 5 6 Pinning Description base TR1 input (base) TR2 output (collector) TR2 R2 Simplified outline 6 5 4 Graphi...