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NSR01F30NXT5G

ON Semiconductor

Schottky Barrier Diode

NSR01F30NXT5G Schottky Barrier Diode These Schottky barrier diodes are optimized for low forward voltage drop and low ...


ON Semiconductor

NSR01F30NXT5G

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Description
NSR01F30NXT5G Schottky Barrier Diode These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current. The DSN2 (Dual Silicon No−lead) package is a chip level package using solderable metal contacts under the package similar to DFN style packages. The DSN style package enables 100% utilization of the package area for active silicon, offering a significant performance per board area advantage compared to products in plastic molded packages. The low thermal resistance enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. Features Very Low Forward Voltage Drop − 370 mV @ 10 mA Low Reverse Current − 7.0 mA @ 10 V VR 100 mA of Continuous Forward Current ESD Rating − Human Body Model: Class 3B ESD Rating − Machine Model: Class C Very High Switching Speed Low Capacitance − CT = 7 pF This is a Halide−Free Device This is a Pb−Free Device Typical Applications LCD and Keypad Backlighting Camera Photo Flash Buck and Boost dc−dc Converters Reverse Voltage and Current Protection Clamping & Protection Markets Mobile Handsets MP3 Players Digital Camera and Camcorders Notebook PCs & PDAs GPS MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 30 V Forward Current (DC) IF 100 mA Forward Surge Current IFSM A (60 Hz @ 1 cycle) 4.0 ESD Rating: Human Body Model ESD >8.0 kV Machine Model >400 V Stresses exceeding Maximum Ratings m...




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