BTC2411L3

www.DataSheet4U.com CYStech Electronics Corp. Spec. No. : C203L3 Issued Date : 2005.02.22 Revised Date : Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTC2411L3 Description The BTC2411L3 is designed for using in driver stage of AF amplifier and general purpose switching application. High IC(Max), IC(Max) = 0.6A. Low VCE(sat) , Typ. VCE(sat) = 0.3V at IC/IB = 500mA/50mA. Optimal for low Voltage operation. Complementary to BTA1036L3. Symbol BTC2411L3 Outline SOT-223 C E B：Base C：Collector E：Emitter C B Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation (TC=25°C) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD Tj Tstg Limits 75 40 6 0.6 5 150 -55~+150 Unit V V V A W °C °C BTC2411L3 CYStek Product Specification www.DataSheet4U.com CYStech Electronics Corp. Spec. No. : C203L3 Issued Date : 2005.02.22 Revised Date : Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO ICEX IEBO *VCE(sat)1 *VCE(sat) 2 *VCE(sat)3 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 *hFE4 *hFE5 fT Cob Min. 75 40 6 0.75 35 50 75 82 40 300 Typ. 6 Max. 10 10 10 0.5 0.4 0.75 0.95 1.2 390 Unit V V V nA nA nA V V V V V Test Conditions IC=10µA IC=10mA IE=10µA VCB=60V VCE=60V, VBE=-3V VEB=3V IC=380mA, IB=10mA IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=1V, IC=0.1mA VCE=1V, IC=1mA VCE=1V, IC=10mA VCE=1V, IC=150mA VCE...