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ST93CS57 Dataheets PDF



Part Number ST93CS57
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description (ST93CS56 / ST93CS57) 2K 128 x 16 SERIAL MICROWIRE EEPROM
Datasheet ST93CS57 DatasheetST93CS57 Datasheet (PDF)

www.DataSheet4U.com ST93CS56 ST93CS57 2K (128 x 16) SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE – 3V to 5.5V for the ST93CS56 – 2.5V to 5.5V for the ST93CS57 USER DEFINED WRITE PROTECTED AREA PAGE WRITE MODE (4 WORDS) SEQUENTIAL READ OPERATION 5ms TYPICAL PROGRAMMING TIME ST93CS56 and ST93CS57 are replaced by the M93S56 8 1 PSDIP8 (B.

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www.DataSheet4U.com ST93CS56 ST93CS57 2K (128 x 16) SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE – 3V to 5.5V for the ST93CS56 – 2.5V to 5.5V for the ST93CS57 USER DEFINED WRITE PROTECTED AREA PAGE WRITE MODE (4 WORDS) SEQUENTIAL READ OPERATION 5ms TYPICAL PROGRAMMING TIME ST93CS56 and ST93CS57 are replaced by the M93S56 8 1 PSDIP8 (B) 0.4mm Frame 8 1 SO8 (M) 150mil Width Figure 1. Logic Diagram DESCRIPTION The ST93CS56 and ST93CS57 are 2K bit Electrically Erasable Programmable Memory (EEPROM) fabricated with SGS-THOMSON’s High Endurance Single Polysilicon CMOS technology. The memory is accessed through a serial input D and output Q. The 2K bit memory is organized as 128 x 16 bit words.The memory is accessed by a set of instructions which include Read, Write, Page Write, Write All and instructions used to set the memory protection. A Read instruction loads the address of the first word to be read into an internal address pointer. Table 1. Signal Names S D Q C PRE W VCC VSS Chip Select Input Serial Data Input Serial Data Output Serial Clock Protect Enable Write Enable Supply Voltage Ground VCC D C S PRE W ST93CS56 ST93CS57 Q VSS AI00896B June 1997 This is information on a product still in production bu t not recommended for new de signs. 1/16 www.DataSheet4U.com ST93CS56, ST93CS57 Figure 2A. DIP Pin Connections Figure 2B. SO Pin Connections ST93CS56 ST93CS57 S C D Q 1 2 3 4 8 7 6 5 AI00897B ST93CS56 ST93CS57 VCC PRE W VSS S C D Q 1 2 3 4 8 7 6 5 AI00898C VCC PRE W VSS Table 2. Absolute Maximum Ratings (1) Symbol TA TSTG TLEAD VIO VCC VESD Parameter Ambient Operating Temperature Storage Temperature Lead Temperature, Soldering (SO8 package) (PSDIP8 package) 40 sec 10 sec Value –40 to 85 –65 to 150 215 260 –0.3 to VCC +0.5 –0.3 to 6.5 (2) Unit °C °C °C V V V V Input or Output Voltages (Q = VOH or Hi-Z) Supply Voltage Electrostatic Discharge Voltage (Human Body model) Electrostatic Discharge Voltage (Machine model) (3) 3000 500 Notes: 1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the SGS-THOMSON SURE Program and other relevant quality documents. 2. MIL-STD-883C, 3015.7 (100pF, 1500 Ω). 3. EIAJ IC-121 (Condition C) (200pF, 0 Ω). DESCRIPTION (cont’d) The data is then clocked out serially. The address pointer is automatically incremented after the data is output and, if the Chip Select input (S) is held High, the ST93CS56/57 can output a sequential stream of data words. In this way, the memory can be read as a data stream of 16 to 2048 bits, or continuously as the address counter automatically rolls over to 00 when the highest address is reached. Within the time required by a programming cycle (tW), up to 4 words may be written with the help of the Page Write instruction; the whole memory may also be erased, or set to a predetermined pattern, by using the Write All instruction. Within the memory, an user defined area may be protected against further Write instructions. The size of this area is defined by the content of a Protect Register, located outside of the memory array. As a final protection step, data may be permanently protected by programming a One Time Programing bit (OTP bit) which locks the Protect Register content. Programming is internally self-timed (the external clock signal on C input may be disconnected or left running after the start of a Write cycle) and does not require an erase cycle prior to the Write instruction. The Write instruction writes 16 bits at one time into one of the 128 words, the Page Write instruction writes up to 4 words of 16 bits to sequential locations, assuming in both cases that all addresses are outside the Write Protected area. After the start of the programming cycle, a Ready/Busy signal is available on the Data output (Q) when the Chip Select (S) input pin is driven High. 2/16 www.DataSheet4U.com ST93CS56, ST93CS57 AC MEASUREMENT CONDITIONS Input Rise and Fall Times Input Pulse Voltages Input and Output Timing Reference Voltages ≤ 20ns 0.2VCC to 0.8VCC 0.3VCC to 0.7VCC Figure 3. AC Testing Input Output Waveforms 0.8VCC 0.7VCC 0.3VCC AI00825 0.2VCC Note that Output Hi-Z is defined as the point where data is no longer driven. Table 3. Capacitance (1) (TA = 25 °C, f = 1 MHz ) Symbol C IN COUT Parameter Input Capacitance Output Capacitance Test Condition VIN = 0V VOUT = 0V Min Max 5 5 Unit pF pF Note: 1. Sampled only, not 100% tested. Table 4. DC Characteristics (TA = 0 to 70°C o.


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