C3931

Transistors 2SC3931 Silicon NPN epitaxial planar type For high-frequency amplification 0.3+–00..01 Unit: mm 0.15+–00..0150 (0.425) ■ Features 3 1.25±0.10 2.1±0.1 5˚ Optimum for RF amplification of FM/AM radios High transition frequency fT S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 1 2 (0.65) (0.65) 0.2±0.1 / ■ Absolute Maximum Ratings Ta = 25°C 1.3±0.1 2.0±0.2 10˚ Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 30 V c e. d ty Collector-emitter voltage (Base open) VCEO 20 0 to 0.1 0.9±0.1 0.9–+00..12 V n d stag tinue Emitter-base voltage (Collector open) VEBO 3 V a e cle con Collector current IC 15 mA lifecy , dis Collector power dissipation PC 150 mW n u duct typed Junction temperature Tj 150 °C te tin Pro ed Storage temperature Tstg −55 to +150 °C Marking Symbol: U 1: Base 2: Emitter 3:Collector EIAJ: SC-70 SMini3-G1 Package in n s followlianngefdoudriscontinu ■ Electrical Characteristics Ta = 25°C ± 3°C a o lude e, p Parameter Symbol Conditions Min Typ Max Unit c d inc e typ Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 30 V tinue anc Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 3 V M is con inten Base-emitter voltage VBE VCB = 6 V, IE = −1 mA 720 mV /Dis ma Forward current transfer ratio * hFE VCB = 6 V, IE = −1 mA 65 260  D ance type, Transition frequency fT VCB = 6 V, IE =...