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IRF3711SPBF Dataheets PDF



Part Number IRF3711SPBF
Manufacturers International Rectifier
Logo International Rectifier
Description HEXFET Power MOSFET
Datasheet IRF3711SPBF DatasheetIRF3711SPBF Datasheet (PDF)

www.DataSheet4U.com PD- 94948 SMPS MOSFET Applications High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor Power Synchronous FET l Optimized for Synchronous Buck Converters Including Capacitive Induced Turn-on Immunity l Lead-Free l IRF3711PbF IRF3711SPbF IRF3711LPbF HEXFET® Power MOSFET VDSS 20V RDS(on) max 6.0mΩ ID 110A† Benefits l Ultra-Low Gate Impedance l l Very Low RDS(on) at 4.5.

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www.DataSheet4U.com PD- 94948 SMPS MOSFET Applications High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor Power Synchronous FET l Optimized for Synchronous Buck Converters Including Capacitive Induced Turn-on Immunity l Lead-Free l IRF3711PbF IRF3711SPbF IRF3711LPbF HEXFET® Power MOSFET VDSS 20V RDS(on) max 6.0mΩ ID 110A† Benefits l Ultra-Low Gate Impedance l l Very Low RDS(on) at 4.5V VGS TO-220AB IRF3711PbF D2Pak IRF3711SPbF TO-262 IRF3711LPbF Absolute Maximum Ratings Symbol VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TA = 25°C TJ , TSTG Fully Characterized Avalanche Voltage and Current Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation… Linear Derating Factor Junction and Storage Temperature Range Max. 20 ± 20 110† 69 440 120 3.1 0.96 -55 to + 150 Units V V A W W W/°C °C Thermal Resistance Parameter RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface „ Junction-to-Ambient„ Junction-to-Ambient (PCB mount)… Typ. ––– 0.50 ––– ––– Max. 1.04 ––– 62 40 Units °C/W Notes  through † are on page 11 www.irf.com 1 2/27/04 www.DataSheet4U.com IRF3711/S/LPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 20 ––– ––– Static Drain-to-Source On-Resistance ––– Gate Threshold Voltage 1.0 ––– Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– Typ. ––– 0.022 4.7 6.2 ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 6.0 VGS = 10V, ID = 15A ƒ mΩ 8.5 VGS = 4.5V, ID = 12A ƒ 3.0 V VDS = VGS, ID = 250µA 20 VDS = 16V, VGS = 0V µA 100 VDS = 16V, VGS = 0V, TJ = 125°C 200 VGS = 16V nA -200 VGS = -16V Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 53 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 29 7.3 8.9 33 12 220 17 12 2980 1770 280 Max. Units Conditions ––– S VDS = 16V, ID = 30A 44 ID = 15A ––– nC VDS = 10V ––– VGS = 4.5V ––– VGS = 0V, VDS = 10V ––– VDD = 10V ––– ID = 30A ns ––– RG = 1.8Ω ––– VGS = 4.5V ƒ ––– VGS = 0V ––– pF VDS = 10V ––– ƒ = 1.0MHz Avalanche Characteristics Symbol EAS IAR Parameter Single Pulse Avalanche Energy‚ Avalanche Current Typ. ––– ––– Max. 460 30 Units mJ A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Recovery Recovery Recovery Time Charge Time Charge Min. Typ. Max. Units ––– ––– ––– 110† ––– 440 1.3 ––– 75 92 72 98 V ns nC ns nC A VSD trr Qrr trr Qrr ––– 0.88 ––– 0.82 ––– 50 ––– 61 ––– 48 ––– 65 2 Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25°C, IS = 30A, VGS = 0V ƒ TJ = 125°C, IS = 30A, VGS = 0V ƒ TJ = 25°C, IF = 16A, VR=10V di/dt = 100A/µs ƒ TJ = 125°C, IF = 16A, VR=10V di/dt = 100A/µs ƒ www.irf.com www.DataSheet4U.com IRF3711/S/LPbF 1000 VGS 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP 1000 I D , Drain-to-Source Current (A) 100 I D , Drain-to-Source Current (A) VGS 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP 100 2.7V 2.7V 20µs PULSE WIDTH TJ = 25 °C 1 10 100 10 0.1 10 0.1 20µs PULSE WIDTH TJ = 150 ° C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 TJ = 25 ° C TJ = 150 ° C RDS(on) , Drain-to-Source On Resistance (Normalized) 2.0 ID = 110A I D , Drain-to-Source Current (A) 1.5 100 1.0 0.5 10 2.0 V DS = 25V 20µs PULSE WIDTH 3.0 4.0 5.0 6.0 7.0 8.0 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 www.DataSheet4U.com IRF3711/S/LPbF 100000 14 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd , C ds SHORTED Crss = C gd Coss = C ds + Cgd ID = 30A 12 10 8 6 4 2 0 VDS = 16V VDS = 10V C, Capacitance(pF) 10000 Ciss Coss 1000 Crss 100 1 10 100 FOR TEST CIRCUIT SEE FIGURE 13 0 20 40 60 80 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 10000 ISD , Reverse Dra.


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