Document
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PD- 94948
SMPS MOSFET
Applications High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor Power Synchronous FET l Optimized for Synchronous Buck Converters Including Capacitive Induced Turn-on Immunity l Lead-Free
l
IRF3711PbF IRF3711SPbF IRF3711LPbF
HEXFET® Power MOSFET
VDSS
20V
RDS(on) max
6.0mΩ
ID
110A
Benefits l Ultra-Low Gate Impedance
l l Very Low RDS(on) at 4.5V VGS
TO-220AB IRF3711PbF
D2Pak IRF3711SPbF
TO-262 IRF3711LPbF
Absolute Maximum Ratings
Symbol
VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TA = 25°C TJ , TSTG
Fully Characterized Avalanche Voltage and Current
Parameter
Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation
Linear Derating Factor Junction and Storage Temperature Range
Max.
20 ± 20 110 69 440 120 3.1 0.96 -55 to + 150
Units
V V A W W W/°C °C
Thermal Resistance
Parameter
RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB mount)
Typ.
––– 0.50 ––– –––
Max.
1.04 ––– 62 40
Units
°C/W
Notes through are on page 11
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IRF3711/S/LPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 20 ––– ––– Static Drain-to-Source On-Resistance ––– Gate Threshold Voltage 1.0 ––– Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– Typ. ––– 0.022 4.7 6.2 ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 6.0 VGS = 10V, ID = 15A mΩ 8.5 VGS = 4.5V, ID = 12A 3.0 V VDS = VGS, ID = 250µA 20 VDS = 16V, VGS = 0V µA 100 VDS = 16V, VGS = 0V, TJ = 125°C 200 VGS = 16V nA -200 VGS = -16V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 53 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 29 7.3 8.9 33 12 220 17 12 2980 1770 280 Max. Units Conditions ––– S VDS = 16V, ID = 30A 44 ID = 15A ––– nC VDS = 10V ––– VGS = 4.5V ––– VGS = 0V, VDS = 10V ––– VDD = 10V ––– ID = 30A ns ––– RG = 1.8Ω ––– VGS = 4.5V ––– VGS = 0V ––– pF VDS = 10V ––– ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS IAR
Parameter
Single Pulse Avalanche Energy Avalanche Current
Typ.
––– –––
Max.
460 30
Units
mJ A
Diode Characteristics
Symbol
IS
ISM
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Recovery Recovery Recovery Time Charge Time Charge
Min. Typ. Max. Units ––– ––– ––– 110 ––– 440 1.3 ––– 75 92 72 98 V ns nC ns nC A
VSD trr Qrr trr Qrr
––– 0.88 ––– 0.82 ––– 50 ––– 61 ––– 48 ––– 65
2
Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25°C, IS = 30A, VGS = 0V TJ = 125°C, IS = 30A, VGS = 0V TJ = 25°C, IF = 16A, VR=10V di/dt = 100A/µs TJ = 125°C, IF = 16A, VR=10V di/dt = 100A/µs
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IRF3711/S/LPbF
1000
VGS 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP
1000
I D , Drain-to-Source Current (A)
100
I D , Drain-to-Source Current (A)
VGS 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP
100
2.7V
2.7V
20µs PULSE WIDTH TJ = 25 °C
1 10 100
10 0.1
10 0.1
20µs PULSE WIDTH TJ = 150 ° C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
TJ = 25 ° C TJ = 150 ° C
RDS(on) , Drain-to-Source On Resistance (Normalized)
2.0
ID = 110A
I D , Drain-to-Source Current (A)
1.5
100
1.0
0.5
10 2.0
V DS = 25V 20µs PULSE WIDTH 3.0 4.0 5.0 6.0 7.0 8.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( °C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF3711/S/LPbF
100000
14
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd , C ds SHORTED Crss = C gd Coss = C ds + Cgd
ID = 30A
12 10 8 6 4 2 0
VDS = 16V VDS = 10V
C, Capacitance(pF)
10000
Ciss Coss
1000
Crss
100 1 10 100
FOR TEST CIRCUIT SEE FIGURE 13
0 20 40 60 80
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
10000
ISD , Reverse Dra.