NDD04N60Z

NDF04N60Z, NDD04N60Z Power MOSFET, N-Channel, 600 V, 2.0 W FeLatouwreOsN Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Symbol NDF NDD Unit Drain−to−Source Voltage VDSS 600 V Continuous Drain Current RqJC (Note 1) ID 4.8 4.1 A Continuous Drain Current RqJC, TA = 100°C (Note 1) ID 3.0 2.6 A Pulsed Drain Current, IDM VGS @ 10V Power Dissipation RqJC PD Gate−to−Source Voltage VGS Single Pulse Avalanche Energy, ID = 4.0 EAS A 20 20 A 30 83 W ±30 V 120 mJ ESD (HBM) (JESD22−A114) Vesd 3000 V RMS Isolation Voltage VISO 4500 − V (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 15) Peak Diode Recovery (Note 2) dV/dt 4.5 V/ns MOSFET dV/dt dV/dt 60 V/ns Continuous Source Current (Body Diode) IS 4.0 A Maximum Temperature for Soldering TL Leads 260 °C Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Limited by maximum junction temperature 2. ISD = 4.0 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS, TJ = +150°C www.onsemi.com VDSS (@ TJmax) 650 V RDS(on) (MAX) @ 2 A 2.0 Ω N−Channel D (2) G (1) S (3) 1 2 3 NDF04N60ZG, NDF04N60...